SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions.
Based on fine trench FS-V technology, blocking voltage up to 750V
Low VCE(sat) with positive temperature coefficient
Low switching loss
Low Qg and Cres
Using DBC with excellent thermal conductivity
Built-in NTC for each phase
Direct water-cooled substrate, low thermal resistance
| Product Name | Package form | Marking | Hazardous Substance Control | Packing Type | Remarks |
|---|---|---|---|---|---|
| SGM820PB8B3TFM | B3 | SGM820PB8B3TFM | Carton |
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SGM820PB8B3TFM | 0 | 1970-01-01 | SGM820PB8B3TFM Brief Datasheet |
